Substrate processing device and substrate processing method

ABSTRACT

The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.

1. TECHNICAL FIELD

The present disclosure relates to an apparatus for processing asubstrate, which performs a processing process such as a depositionprocess and an etching process on a substrate.

2. BACKGROUND

Generally, a thin-film layer, a thin-film circuit pattern, or an opticalpattern should be formed on a substrate for manufacturing a solar cell,a semiconductor device, a flat panel display device, etc. To this end, aprocessing process is performed, and examples of the processing processinclude a deposition process of depositing a thin film including aspecific material on a substrate, a photo process of selectivelyexposing a portion of a thin film by using a photosensitive material, anetching process of removing the selectively exposed portion of the thinfilm to form a pattern, etc.

A process of forming a thin film on a substrate or removing the thinfilm is performed by supplying the substrate with a gas for forming aspecific material, a gas for selectively removing the specific material,or a material corresponding thereto. Particularly, the process offorming the thin film may be performed by supplying a reactant gas and asource gas for forming a specific material, and in this case, the sourcegas and the reactant gas may be simultaneously supplied to the substrateor may be sequentially supplied to the substrate with a time differencetherebetween.

As a semiconductor device manufacturing process advances to a fineprocess, various methods for forming a uniform thin film on a finepattern formed on a surface of a substrate or forming a pattern arebeing applied, and one of the various methods is an atomic layerdeposition (ALD) process. The ALD process is a process which does notsimultaneously supply a source gas and a reactant gas but supplies thesource gas and the reactant gas with a time difference therebetween toinduce only a reaction performed on the surface of the substrate,forming a thin film on the substrate through a reaction between thesource gas and the reactant gas. The source gas may be adsorbed onto thesurface of the substrate by supplying the source gas to the substratefirst, and then, the other source gas may be removed by using a purgegas. Subsequently, by supplying the reactant gas to the substrate, thereactant gas may react with the source gas adsorbed onto the surface ofthe substrate, and then, the other reactant gas may be purged by usingthe purge gas. In a step of supplying the reactant gas, an atomic layeror a single-layer thin film is formed on the surface of the substrate onthe basis of the reaction between the source gas and the reactant gas.Such a procedure may be repeated up to a desired thickness, and thus, athin film having a certain thickness may be formed on the surface of thesubstrate.

However, in the ALD process, since the reaction between the source gasand the reactant gas is performed on only the surface of the substrate,there is a disadvantage where a speed at which a thin film is depositedis lower than a general chemical vapor deposition (CVD) process and thelike.

Also, a process of quickly repeating a step of supplying the source gasto the same process space, purging the supplied source gas, supplyingthe reactant gas, and purging the reactant gas has a drawback where atime is long expended. In a case where a process is quickly repeated,the supplied source gas or reactant gas is not completely discharged(purged) from the process space to the outside of a chamber, and due tothis, an atomic layer thin film is not formed, causing a drawback wheretwo gases meet each other to form a CVD thin film.

In a process of quickly supplying a source gas or a reactant gas and anALD process based on the source gas or the reactant gas, a structurewhere the two gases are not mixed in a process and a pure ALD film areneeded.

SUMMARY

The present disclosure is devised to solve the above-described problemby providing a process chamber in which a source gas and a reactant gasare not mixed in a space.

Moreover, the present disclosure solves a technical problem by providingan apparatus for providing a fast process method in forming a thin filmthrough an ALD process.

Moreover, the present disclosure solves a technical problem by providingan apparatus which forms a film (a pure ALD layer) using a pure ALDprocess on a substrate to densify a certain thin film or improve filmquality.

Moreover, the present disclosure solves a technical problem by providingan apparatus which purges a reactant gas remaining on a substratequickly moving from a reactant gas space to a source gas space andsimultaneously supplies plasma to a portion of a purge gas supply unitsupplying a purge gas for quickly purging impurities of a generated thinfilm, in a purge gas space for separating the source gas space and thereactant gas space.

An apparatus for processing a substrate according to the presentdisclosure for achieving solving the above-described technical problemmay include: a chamber; a substrate supporting unit rotatably installedin a process space of the chamber to support one or more substrates; afirst gas distribution unit for distributing a source gas to a firstregion of the process space; a second gas distribution unit fordistributing a reactant gas, reacting with the source gas, to a secondregion of the process space; and a third gas distribution unit fordistributing a purge gas, dividing the first region and the secondregion, to a third region.

A method of processing a substrate according to the present disclosuremay include: a step of, when a first substrate is disposed in a firstregion of a process space of a chamber, distributing a source gas to thefirst region to perform an adsorption process; a step of, when theadsorption process ends, rotating a substrate supporting unit supportingthe first substrate in order for the first substrate to be disposed in asecond region of the process space of the chamber; a step of, when thefirst substrate is disposed in the second region, distributing areactant gas to the second region to perform a deposition process; and astep of, when the deposition process ends, rotating the substratesupporting unit in order for the first substrate to be disposed in thefirst region, wherein the step of performing the deposition process maydistribute a reactant gas, activated by using plasma, to the secondregion to perform the deposition process. According to a solution meansfor the problem, an apparatus for processing a substrate according tothe present disclosure may form a pure ALD thin film through a purge gasdistribution space for completely dividing a process space of a chamberinto a source gas distribution space and a reactant gas distributionspace.

Moreover, the apparatus for processing a substrate according to thepresent disclosure may purge impurities of a thin film generated on asubstrate by using a plasma gas distributed from a third gasdistribution unit which is a purge gas distribution space and maycompletely purge a process gas (i.e., a source gas or a reactant gas)remaining between patterns of the substrate by using a purge gasdistributed from the third gas distribution unit.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a plan view schematically illustrating a shape of an apparatusfor processing a substrate according to an embodiment of the presentdisclosure.

FIG. 2 is a diagram for describing an upper lid of a chamber in anapparatus for processing a substrate according to an embodiment of thepresent disclosure.

FIGS. 3A and 3B are schematic side cross-sectional views taken alongline A-A of FIG. 1 for describing an upper lid of a chamber in anapparatus for processing a substrate according to an embodiment of thepresent disclosure.

FIG. 4 is a schematic side cross-sectional view taken along line A′-A′of FIG. 2 for describing an upper lid of a chamber in an apparatus forprocessing a substrate according to an embodiment of the presentdisclosure.

FIG. 5 is another schematic side cross-sectional view taken along lineA′-A′ of FIG. 2 for describing an upper lid of a chamber in an apparatusfor processing a substrate according to an embodiment of the presentdisclosure.

FIG. 6 is a schematic bottom view of an upper lid of a chamber in anapparatus for processing a substrate according to an embodiment of thepresent disclosure.

FIG. 7 is a schematic plane cross-sectional view of a third gasdistribution unit in an apparatus for processing a substrate accordingto an embodiment of the present disclosure.

FIG. 8 is a table showing arrangement of embodiments based on a regionto which a plasma gas is distributed.

FIGS. 9 to 14B are schematic plan views of a substrate supporting unitin an apparatus for processing a substrate according to an embodiment ofthe present disclosure.

FIG. 15 is a schematic flowchart of a method of processing a substrateaccording to the present disclosure.

DETAILED DESCRIPTION

Hereinafter, preferable embodiments according to the present disclosurewill be described in detail with reference to the drawings.

FIG. 1 is a plan view schematically illustrating a shape of a substrateprocessing apparatus according to an embodiment of the presentdisclosure. FIG. 2 is a plan view when an upper lid is seen from abovein a chamber of which an upper surface is cut.

Referring to FIGS. 1 to 5, in the substrate processing apparatusaccording to the present disclosure, a process space 1 may be providedin the chamber. An upper lid may be provided in an upper portion of theprocess space 1 of the chamber, and a substrate supporting unit 600 maybe provided in a lower portion of the process space 1 of the chamber.One or more substrates may be disposed on the substrate supporting unit600.

The process space 1 of the chamber may be divided into a first region10, a second region 20, and a third region 30. A first gas distributionunit 100 for distributing a source gas to the first region 10 may bedisposed in the first region 10. A second gas distribution unit 200 fordistributing a reactant gas reacting with the source gas to the secondregion 20 may be disposed in the second region 20. The first gasdistribution unit 100 and the second gas distribution unit 200 may becoupled to the upper lid.

The third region 30 which divides the process space 1 of the chamberinto the first region 10 and the second region 20 may be provided. Thethird region 30 may divide the process space 1 of the chamber into thefirst region 10 and the second region 20 so that the source gas which isa process gas in the first region 10 is not mixed with the reactant gaswhich is a process gas in the second region 20. A third gas distributionunit 300 distributing a purge gas may be disposed in the third region30. The third gas distribution unit 300 may be coupled to the upper lid.

Views taken along line A-A in the chamber of FIG. 1 may be FIGS. 3A and3B. The second gas distribution unit 200 distributing the reactant gas,as illustrated in FIG. 3A, may be implemented as an electrode structuretype configured with a first electrode 210 and a second electrode 220.The second gas distribution unit 200 distributing the reactant gas maybe implemented as a showerhead type. In this case, the second gasdistribution unit 200 may not include the first electrode 210 and thesecond electrode 220. For example, the second gas distribution unit 200distributing the reactant gas may be implemented as the showerhead typelike the first gas distribution unit 100 illustrated in FIG. 3A.

In an embodiment, when a radio frequency (RF) power 700 is applied tothe first electrode 210, a ground may be connected to the secondelectrode 220. On the other hand, when the ground is connected to thefirst electrode 210, the RF power may be applied to the second electrode220. In all of two cases, when a plasma gas is supplied, plasma may begenerated between the first electrode 210 and the second electrode 220.In this case, the first electrode 210 and the second electrode 220having an electric potential difference therebetween may configure aplasma distribution unit. Also, one or more protrusion electrodes 230may be formed in a direction toward the substrate supporting unit 600 inthe first electrode 210. Accordingly, plasma may be generated in thesecond region 20.

The second gas distribution unit 200 may be connected to a remote plasmadevice (not shown) outside the chamber. Therefore, the second gasdistribution unit 200 may distribute an ionized gas or a radical to thesecond region 20.

When the second gas distribution unit 200 is implemented as theelectrode structure type, the first electrode 210 and the protrusionelectrode 230 may be connected to each other to have the same electricpotential. Therefore, due to an electric potential difference, plasmamay be generated between the first electrode 210 and the protrusionelectrode 230 and between the first electrode 210 and the protrusionelectrode 230. In this case, plasma may be generated between the firstelectrode 210 and the second electrode 220. Plasma may also be generatedbetween the protrusion electrode 230 and the second electrode 220.Plasma may be generated between the first electrode 210 and the secondelectrode 220 and between the protrusion electrode 230 and the secondelectrode 220.

A gas distribution hole (not shown) of the second gas distribution unit200 may be provided as a gas line in the protrusion electrode 230 in alengthwise direction. In this case, a reactant gas or a plasmagenerating gas may be distributed through the gas distribution holeprovided in the protrusion electrode 230. A gas distribution hole may beprovided in a direction toward the process space in the first electrode210. In this case, a reactant gas or a plasma generating gas may bedistributed through the gas distribution hole provided in the firstelectrode 210.

The second gas distribution unit 200 may include a plasma distributionunit (not shown) which distributes an ionized gas or a radical. Theplasma distribution unit may be connected to the remote plasma device(not shown) so as to distribute the ionized gas or the radical.

The first gas distribution unit 100 and the second gas distribution unit200 may be implemented as different types of distribution structures.For example, the first gas distribution unit 100 may be implemented asthe showerhead type, and the second gas distribution unit 200 may beimplemented as the electrode structure type. In this case, a process ofadsorbing a source gas onto a substrate may be performed in the firstregion 10, and a process of depositing a thin film using an ALD processon the substrate on the basis of a reaction between a reactant gas andthe source gas adsorbed onto the substrate may be performed in thesecond region 20.

Moreover, the first gas distribution unit 100 may be coupled to theupper lid so as to be disposed in an upper portion of the first region10. The first gas distribution unit 100 may supply the source gas to thefirst region 10. The first gas distribution unit 100 may be implementedas the showerhead type. In this case, a first gas distribution hole 110for distributing the source gas to a portion (i.e., the first region 10)under the first gas distribution unit 100 may be provided in a downwarddirection of the process space 1. The first gas distribution hole 110may be provided as a plurality of holes and may distribute the sourcegas in a direction toward the substrate supporting unit 600. The firstgas distribution unit 100 may be implemented as the electrode structuretype as illustrated in FIG. 3B. In this case, the first gas distributionunit 100 may include the first electrode 120, the protrusion electrode130, and the second electrode 140.

The first gas distribution unit 100 and the second gas distribution unit200 may be implemented in a distribution structure of the same type. Inthis case, as illustrated in FIG. 3B, the first gas distribution unit100 and the second gas distribution unit 200 may be all implemented asthe electrode structure type. Although not shown, the first gasdistribution unit 100 and the second gas distribution unit 200 may beall implemented as the showerhead type.

Referring to FIGS. 1 to 4, the third region 30 may be separated anddivided into the first region 10 and the second region 20. When a centerportion of the upper lid is cut along line A′-A′ with reference to FIG.2, a side cross-sectional view of FIG. 4 may be seen.

Referring to FIGS. 2 and 4, the third gas distribution unit 300distributes a purge gas to the third region 30. The third gasdistribution unit 300 may distribute the purge gas to the third region30 divided into a first zone 302, a second zone 304, and a third zone306.

A first purge gas distribution unit 310 and a first plasma distributionunit 302 a may be disposed in the first zone 302. The RF power 700 forgenerating plasma may be connected to the first plasma distribution unit302 a. The RF power may be a high frequency power.

The first plasma distribution unit 302 a may be disposed inward from thefirst purge gas distribution unit 310 in the first zone 302. That is,the first purge gas distribution unit 310 may be disposed next to bothsides of the first plasma distribution unit 302 a.

The first purge gas distribution unit 310 in the first zone 302 maydistribute the purge gas to the first zone 302 to purge the source gasof the first region 10 and the reactant gas of the second region 20 soas to be separated from each other.

The first plasma distribution unit 302 a in the first zone 302 maydistribute the plasma gas to the first zone 302 to perform plasmatreatment in a process where the substrate passes through the first zone302 on the basis of a rotation of the substrate supporting unit 600.Therefore, the first plasma distribution unit 302 a in the first zone302 may remove internal impurities of a thin film on the substrate toenhance the quality of the thin film. Also, when the substrate rotatesafter a deposition process ends, the plasma treatment may be performedsimultaneously while purging a process gas remaining on the substrate inthe third region 30, thereby maximally shortening a process time. In astructure as seen from a lower surface of the third gas distributionunit 300, the first purge gas distribution unit 310, the first plasmadistribution unit 302 a, and the first purge gas distribution unit 310may be continuously provided.

In the third gas distribution unit 300, the second zone 304 may beprovided in a space opposite to the first zone 302. A window 304 a maybe provided in the second zone 304. The window 304 a may be a windowwhich is formed of a transparent material in order for a substratesensing device 800 to sense and measure a temperature, a position, and arotation of the substrate at the outside.

The substrate sensing device 800 may sense and measure a distance fromthe substrate to a lower surface 308 of the third gas distribution unit.The substrate sensing device 800 may include a vision apparatus and atemperature detector which measures a temperature of the substrate.

The temperature detector which measures a temperature of the substratemay be disposed in the second zone 304. The temperature detector may beinstalled in the third gas distribution unit 300. Also, a second plasmadistribution unit may be disposed in the second zone 304.

The window 304 a may be disposed in the first zone 302. The first plasmadistribution unit 302 a and a second plasma distribution unit may beadditionally installed in the first zone 302 and the second zone 304,respectively. Also, the window 304 a may be installed in each of thefirst zone 302 and the second zone 304.

Referring to FIG. 4, the third gas distribution unit 300 may include acenter purge distribution unit disposed in the third zone 306. Thecenter purge distribution unit may be installed in the upper lid in acenter region of the substrate supporting unit. A purge gas distributionhole for distributing the purge gas may be provided in the center purgedistribution unit. Therefore, the center purge distribution unit maydistribute the purge gas in a direction toward the substrate supportingunit 600. In this case, the center purge distribution unit maydistribute the purge gas to the third zone 306.

The center purge distribution unit may distribute the purge gas to aportion which is a center of the process space of the chamber, and thus,a gas in the first region 10 and a gas in the second region 20 may beseparated from each other at a center of the chamber.

FIG. 5 is a side view taken along line A′-A′ of FIG. 2 corresponding toa portion where the window 304 a and the first plasma distribution unit302 a are not provided.

Referring to FIG. 5, the first purge gas distribution unit 310 may beconnected to one space. Therefore, the process space may be divided intothe first region 10 and the second region 20 through one first purge gasdistribution unit 310.

Moreover, since the first zone 302, the second zone 304, and the thirdzone 306 are divided and separated from one another, the third gasdistribution unit 300 may separate the process space into the firstregion 10 and the second region 20.

A temperature detector 810 which measures a temperature of the substratemay be disposed in a region, other than a region to which a plasma gasis distributed, of the third region 30. The temperature detector 810 mayinclude the substrate sensing device 800 and the window 304 a.

The first plasma distribution unit 302 a may be connected to the remoteplasma device (not shown) so as to distribute an ionized gas or aradical.

A source gas distributed from the first gas distribution unit 100 to thefirst region 10 may include a titanium family element (Ti, Zr, Hf,etc.), silicon (Si), or aluminum (Al). For example, a source gas SGincluding titanium (Ti) may be a titanium tetrachloride (TiCl₄) gas orthe like. Also, the source gas SG containing silicon (Si) may be asilane (SiH₄) gas, a disilane (Si₂H₆) gas, a trisilane (Si₃H₈) gas, atetraethylorthosilicate (TEOS) gas, a dichlorosilane (DCS) gas, ahexachlorosilane (HCD) gas, a tri-dimethylaminosilane (TriDMAS) gas, atrisilylamine (TSA) gas, or the like.

A reactant gas supplied from the second gas distribution unit 200 to thesecond region 20 may include a hydrogen (H₂) gas, a nitrogen (N₂) gas,an oxygen (O₂) gas, a nitrous oxide (N₂O) gas, an ammonia (NH₃) gas, avapor (H₂O) gas, or an ozone (O₃) gas. In this case, the reactant gasmay be mixed with a purge gas including a nitrogen (N₂) gas, an argon(Ar) gas, a xenon (Ze) gas, or a helium (He) gas.

Moreover, a gas for generating plasma may include a hydrogen (H₂) gas, anitrogen (N₂) gas, a mixed gas of a hydrogen (H₂) gas and a nitrogen(N₂) gas, an oxygen (O₂) gas, a nitrous oxide (N₂O) gas, an argon (Ar)gas, a helium (He) gas, or an ammonia (NH₃) gas.

A purge gas which is distributed by the third gas distribution unit 300and is supplied to the third region 30 may include a nitrogen (N₂) gas,an argon (Ar) gas, a xenon (Ze) gas, or a helium (He) gas. The gases maybe inert gases.

Referring to FIGS. 6 to 9, in the substrate processing apparatusaccording to the present disclosure, the third gas distribution unit 300may include the first purge gas distribution unit 310, a second purgegas distribution unit 320, and a center purge distribution unit 330.

The first purge gas distribution unit 310 may distribute a purge gas tothe first zone 302 of the third region 30. The first plasma distributionunit 302 a may be installed in the first purge gas distribution unit310. The first plasma distribution unit 302 a may distribute a plasmagas to the first zone 302. Therefore, as a source gas is adsorbed ontothe substrate in the first region 10 and then the substrate supportingunit 600 rotates, the substrate may pass through the first zone 302 andmay move from the first region 10 to the second region 20, and in thisprocess, the first plasma distribution unit 302 a may perform firstplasma treatment on the substrate passing through the first zone 302.That is, the first plasma distribution unit 302 a may performpre-treatment by using plasma. Accordingly, the first plasmadistribution unit 302 a may remove internal impurities of the source gasadsorbed onto the substrate, thereby contributing to enhance the qualityof a thin film deposited on the substrate.

The first plasma distribution unit 302 a may be disposed in the firstpurge gas distribution unit 310. Therefore, when the substrate is movingfrom the first region 10 to the second region 20, the purge gas, theplasma gas, and the purge gas may be distributed to the substratepassing through the first zone 302. In this case, the distribution ofthe purge gas may be performed by the first purge gas distribution unit310, and the distribution of the plasma gas may be performed by thefirst plasma distribution unit 302 a. The first plasma distribution unit302 a may be implemented as the showerhead type or the electrodestructure type.

The second purge gas distribution unit 320 may distribute a purge gas tothe second zone 304 of the third region 30. The second plasmadistribution unit 304 b may be installed in the second purge gasdistribution unit 320. The second plasma distribution unit 304 b maydistribute a plasma gas to the second zone 304. Therefore, as a thinfilm is deposited through an ALD process on the basis of a reactionbetween the source gas adsorbed onto the substrate and a reactant gas inthe second region 20 and then the substrate supporting unit 600 rotates,the substrate may pass through the second zone 304 and may move from thesecond region 20 to the first region 10, and in this process, the secondplasma distribution unit 304 b may perform second plasma treatment onthe substrate passing through the second zone 304. That is, the secondplasma distribution unit 304 b may perform pre-treatment by usingplasma. Accordingly, the second plasma distribution unit 304 b mayremove internal impurities of the thin film deposited on the substrate,thereby densifying the thin film deposited on the substrate.Accordingly, the second plasma distribution unit 304 b may more enhancethe quality of the thin film deposited on the substrate.

The second plasma distribution unit 304 b may be disposed in the secondpurge gas distribution unit 320. Therefore, when the substrate is movingfrom the second region 20 to the first region 10, the purge gas, theplasma gas, and the purge gas may be distributed to the substratepassing through the second zone 304. In this case, the distribution ofthe purge gas may be performed by the second purge gas distribution unit320, and the distribution of the plasma gas may be performed by thesecond plasma distribution unit 304 b. The second plasma distributionunit 304 b may be implemented as the showerhead type or the electrodestructure type.

The center purge distribution unit 330 may distribute a purge gas to thethird zone 306 of the third region 30. Therefore, the center purgedistribution unit 330 may prevent the source gas distributed to thefirst region 10 from being mixed with the reactant gas distributed tothe second region 20 in the third zone 306. Also, the first purge gasdistribution unit 310 may prevent the source gas distributed to thefirst region 10 from being mixed with the reactant gas distributed tothe second region 20 in the first zone 302. The second purge gasdistribution unit 320 may prevent the source gas distributed to thefirst region 10 from being mixed with the reactant gas distributed tothe second region 20 in the second zone 304.

Here, the substrate processing apparatus according to the presentdisclosure may perform a processing process on the substrate while againmoving the substrate to the first region 10 via the first region 10, thefirst zone 302, the second region 20, and the second zone 304 on thebasis of a rotation of the substrate supporting unit 600. In this case,the substrate supporting unit 600 may be rotated by a rotation unit (notshown). A process of rotating, by the rotation unit, the substratesupporting unit 600 will be described below.

First, when the substrate is located in the first region 10, therotation unit may stop the substrate supporting unit 600. Therefore, ina state where the substrate stops, an adsorption process of adsorbing asource gas onto the substrate may be performed in the first region 10.In this case, the first gas distribution unit 100 may distribute thesource gas to the first region 10.

Subsequently, when the adsorption process ends, the rotation unit mayrotate the substrate supporting unit 600 so that the substrate movesfrom the first region 10 to the second region 20 via the first zone 302.In this case, when the substrate is passing through the first zone 302,the rotation unit may continuously rotate the substrate supporting unit600 without stopping the substrate supporting unit 600. When thesubstrate is passing through the first zone 302, the first plasmatreatment may be performed on the substrate by using a plasma gasdistributed by the first plasma distribution unit 302 a.

Subsequently, when the substrate is located in the second region 20, therotation unit may stop the substrate supporting unit 600. Therefore, ina state where the substrate stops, a process of depositing a thin filmon the basis of a reaction between the source gas adsorbed onto thesubstrate and a reactant gas distributed by the second gas distributionunit 200 may be performed in the second region 20. The second gasdistribution unit 200 may activate the reactant gas by using plasma andmay distribute an activated reactant gas to the second region 20. Inthis case, the substrate processing apparatus according to the presentdisclosure may be implemented to be suitable for a low temperatureprocess. For example, the substrate processing apparatus according tothe present disclosure may be implemented to be suitable for asemiconductor low temperature nitride process. In this case, when thesubstrate is passing through the first zone 302, the first plasmadistribution unit 302 a may not distribute the plasma gas. The secondgas distribution unit 200 may distribute the reactant gas to the secondregion 20 in a state which does not activate the reactant gas. In thiscase, the substrate processing apparatus according to the presentdisclosure may be implemented to be suitable for a semiconductor hightemperature nitride process. In this case, when the substrate is passingthrough the first zone 302, the first plasma distribution unit 302 a maydistribute the plasma gas.

Subsequently, when the deposition process ends, the rotation unit mayrotate the substrate supporting unit 600 so that the substrate movesfrom the second region 20 to the first region 10 via the second zone304. In this case, when the substrate is passing through the second zone304, the rotation unit may continuously rotate the substrate supportingunit 600 without stopping the substrate supporting unit 600. When thesubstrate is passing through the second zone 304, second plasmatreatment may be performed on the substrate by using a plasma gasdistributed by the second plasma distribution unit 304 b. In a casewhere the substrate processing apparatus according to the presentdisclosure is implemented to be suitable for a low temperature process,when the substrate is passing through the second zone 304, the secondplasma distribution unit 304 b may not distribute the plasma gas.

As described above, when the substrate is located in the first region 10and the substrate is located in the second region 20, the rotation unitmay stop the substrate supporting unit 600. In this case, when thesubstrate is passing through the first zone 302 and the substrate ispassing through the second zone 304, the rotation unit may continuouslyrotate the substrate supporting unit 600 without stopping the substratesupporting unit 600. Also, only when the substrate is located in thefirst region 10, the rotation unit may stop the substrate supportingunit 600, and when the substrate is passing through the first zone 302,the second region 20, and the second zone 304, the rotation unit maycontinuously rotate the substrate supporting unit 600 without stoppingthe substrate supporting unit 600.

The third gas distribution unit 300 may be implemented to distribute aplasma gas to the first zone 302 of the third region 30 to performpurging on the first zone 302. That is, the plasma gas distributed tothe first zone 302 may function as a purge gas. The substrate supportingunit 600 may rotate so that the substrate passes through the first zone302 and moves from the first region 10 to the second region 20.Therefore, the plasma gas distributed to the first zone 302 may performpurging on the first zone 302, and moreover, may perform pre-treatmenton the substrate passing through the first zone 302. In this case, onlythe first plasma distribution unit 302 a may be disposed in the firstzone 302 without the first purge gas distribution unit 310.

The third gas distribution unit 300 may be implemented to distribute aplasma gas to the second zone 304 of the third region 30 to performpurging on the second zone 304. That is, the plasma gas distributed tothe second zone 304 may function as a purge gas. The substratesupporting unit 600 may rotate so that the substrate passes through thesecond zone 304 and moves from the second region 20 to the first region10. Therefore, the plasma gas distributed to the second zone 304 mayperform purging on the second zone 304, and moreover, may performpost-treatment on the substrate passing through the second zone 304. Inthis case, only the second plasma distribution unit 304 b may bedisposed in the second zone 304 without the second purge gasdistribution unit 320.

Referring to FIGS. 6 to 16, the substrate processing apparatus accordingto the present disclosure may include various embodiments on the basisof a region to which a plasma gas is distributed. In FIG. 8, in eachembodiment, a region to which the plasma gas is distributed is shown as0, and a region to which the plasma gas is not distributed is shown asX. In FIGS. 9 to 16, a portion on which a processing process isperformed by using plasma is hatched. As illustrated in FIGS. 9 to 16,in a state where a first substrate S1 and a second substrate S2 aredisposed at positions symmetrical with respect to a rotational axis ofthe substrate supporting unit 600, the substrate processing apparatusaccording to the present disclosure may perform a processing process onthe first substrate S1 and the second substrate S2 while changingpositions of the first substrate S1 and the second substrate S2 on thebasis of a rotation of the substrate supporting unit 600. For example,when the first substrate S1 is located in the first region 10, thesecond substrate S2 may be located in the second region 20. When thesecond substrate S2 is located in the first region 10, the firstsubstrate S1 may be located in the second region 20. When the firstsubstrate S1 is located in the first zone 302, the second substrate S2may be located in the second zone 304. When the second substrate S2 islocated in the first zone 302, the first substrate S1 may be located inthe second zone 304. In this case, it may be implemented that, when aprocessing process is performed in the first region 10 and the secondregion 20, a plurality of first substrates S1 and a plurality of secondsubstrates S2 are located in each of the first region 10 and the secondregion 20. For example, it may be implemented that two first substratesS1 and two second substrates S2 are located in each of the first region10 and the second region 20.

Embodiments of the substrate processing apparatus according to thepresent disclosure will be described below in detail with reference tothe accompanying drawings.

First Embodiment

As illustrated in FIGS. 8 and 9, in the first embodiment, a processingprocess may be performed on a substrate without using plasma in all ofthe first region 10, the first zone 302, the second region 20, and thesecond zone 304. In the first embodiment, it is possible to implement ahigh temperature process by performing a thermal process in the secondregion 20. In this case, the thermal process and distribution of areactant gas may be alternately performed in the second region 20.Therefore, in the first embodiment, step coverage of a high dielectricmaterial or the like may be improved. Also, the first embodiment may beimplemented to alternately perform the thermal process and an ALDprocess, and thus, a thickness of a thin film may more increase than acase where a thin film is deposited through only the ALD process.

Second Embodiment

As illustrated in FIGS. 8 and 10, in the second embodiment, a processingprocess may be performed on a substrate by using plasma in only thesecond region 20 without using plasma in the first region 10, the firstzone 302, and the second zone 304. In this case, a processing processusing an activated reactant gas may be performed on the substrate in thesecond region 20. The second embodiment may be implemented to besuitable for a low temperature process. For example, the secondembodiment may be implemented to be suitable for a semiconductor lowtemperature nitride process.

Third Embodiment

As illustrated in FIGS. 8, 9, 11A, and 11B, in the third embodiment, aprocessing process may be performed on a substrate by using plasma inonly the first zone 302 without using plasma in the first region 10, thesecond region 20, and the second zone 304. An operation of the thirdembodiment will be described below with respect to a first substrate S1.

First, as illustrated in FIG. 9, in a state where the first substrate S1is located in the first region 10, an adsorption process using a sourcegas may be performed on the first substrate S1 in the first region 10.While the adsorption process is being performed, the substratesupporting unit 600 may maintain a stop state. Also, while theadsorption process is being performed, plasma may not be generated inthe first zone 302.

Subsequently, when the adsorption process ends, as the substratesupporting unit 600 rotates, the first substrate S1 may pass through thefirst zone 302 and may move from the first region 10 to the secondregion 20. In this case, as illustrated in FIG. 11A, when the firstsubstrate S1 is passing through the first zone 302, the first plasmatreatment using plasma may be performed on the first substrate S1 in thefirst zone 302. That is, pre-treatment may be performed by using plasmain the first zone 302. Accordingly, in the third embodiment, internalimpurities of a source gas adsorbed onto a substrate may be removed byusing plasma in the first zone 302, thereby enhancing the quality of athin film deposited on the substrate. After the first substrate S1passes through the first zone 302, plasma may not be generated in thefirst zone 302.

Subsequently, as illustrated in FIG. 11B, when the first substrate S1 islocated in the second region 20, a deposition process using a reactantgas may be performed on the first substrate S1 in the second region 20.While the deposition process is being performed, the substratesupporting unit 600 may maintain a stop state. Also, while thedeposition process is being performed, plasma may not be generated inthe first zone 302.

Subsequently, when the deposition process ends, as the substratesupporting unit 600 rotates, the first substrate S1 may pass through thesecond zone 304 and may move from the second region 20 to the firstregion 10. When the first substrate S1 is passing through the secondzone 304, plasma may be generated in the first zone 302. Also, after thefirst substrate S1 passes through the second zone 304, plasma may not begenerated in the first zone 302. As described above, the thirdembodiment may be implemented so that plasma is generated in the firstzone 302 only when the substrate supporting unit 600 is rotating, andplasma is not generated in the first zone 302 when the substratesupporting unit 600 stops. The third embodiment may be implemented sothat a purge gas is continuously distributed to the third region 30 whenthe substrate supporting unit 600 is rotating and when the substratesupporting unit 600 stops.

Fourth Embodiment

As illustrated in FIGS. 9, 11A, and 12, in the fourth embodiment, aprocessing process may be performed on a substrate by using plasma ineach of the first zone 302 and the second region 20 without using plasmain the first region 10 and the second zone 304. An operation of thefourth embodiment will be described below with respect to a firstsubstrate S1.

First, as illustrated in FIG. 9, in a state where the first substrate S1is located in the first region 10, an adsorption process using a sourcegas may be performed on the first substrate S1 in the first region 10.While the adsorption process is being performed, the substratesupporting unit 600 may maintain a stop state. Also, while theadsorption process is being performed, plasma may not be generated inthe first zone 302.

Subsequently, when the adsorption process ends, as the substratesupporting unit 600 rotates, the first substrate S1 may pass through thefirst zone 302 and may move from the first region 10 to the secondregion 20. In this case, as illustrated in FIG. 11A, when the firstsubstrate S1 is passing through the first zone 302, the first plasmatreatment using plasma may be performed on the first substrate S1 in thefirst zone 302. That is, pre-treatment may be performed by using plasmain the first zone 302. Accordingly, in the fourth embodiment, internalimpurities of a source gas adsorbed onto a substrate may be removed byusing plasma in the first zone 302, thereby enhancing the quality of athin film deposited on the substrate. While plasma is being generated inthe first zone 302, plasma may not be generated in the second region 20.Also, after the first substrate S1 passes through the first zone 302,plasma may not be generated in the first zone 302.

Subsequently, as illustrated in FIG. 12, when the first substrate S1 islocated in the second region 20, a deposition process using an activatedreactant gas may be performed on the first substrate S1 in the secondregion 20. While the adsorption process is being performed, thesubstrate supporting unit 600 may maintain a stop state. As describedabove, the fourth embodiment may be implemented so that a substrate,which a source gas is adsorbed onto and pre-treatment is performed on inthe first region 10 and the first zone 302, is exposed to plasma in thesecond region 20 again, thereby decreasing a deposition thickness of anupper surface to enhance a gap-fill effect. Also, while the depositionprocess is being performed, plasma may not be generated in the firstzone 302.

Subsequently, when the deposition process ends, as the substratesupporting unit 600 rotates, the first substrate S1 may pass through thesecond zone 304 and may move from the second region 20 to the firstregion 10. In this case, when the first substrate S1 is passing throughthe second zone 304, plasma may be generated in the first zone 302.Also, when the first substrate S1 is passing through the second zone304, plasma may not be generated in the second region 20. As describedabove, the fourth embodiment may be implemented so that plasma isgenerated in the first zone 302 only when the substrate supporting unit600 is rotating, and plasma is not generated in the first zone 302 whenthe substrate supporting unit 600 stops. Also, the fourth embodiment maybe implemented so that plasma is generated in the second region 20 onlywhen the substrate supporting unit 600 stops, and plasma is notgenerated in the second region 20 when the substrate supporting unit 600is rotating. The fourth embodiment may be implemented so that a purgegas is continuously distributed to the third region 30 when thesubstrate supporting unit 600 is rotating and when the substratesupporting unit 600 stops.

Fifth Embodiment

As illustrated in FIGS. 12 and 13A to 13C, in the fifth embodiment, aprocessing process may be performed on a substrate by using plasma ineach of the first zone 302, the second region 20, and the second zone304 without using plasma in only the first region 10. An operation ofthe fifth embodiment will be described below with respect to a firstsubstrate S1.

First, as illustrated in FIG. 13A, in a state where the first substrateS1 is located in the first region 10, an adsorption process using asource gas may be performed on the first substrate S1 in the firstregion 10. While the adsorption process is being performed, thesubstrate supporting unit 600 may maintain a stop state. While theadsorption process is being performed, plasma may be generated in thesecond region 20. Also, while the adsorption process is being performed,plasma may not be generated in the second zone 304.

Subsequently, when the adsorption process ends, as the substratesupporting unit 600 rotates, the first substrate S1 may pass through thefirst zone 302 and may move from the first region 10 to the secondregion 20. In this case, as illustrated in FIG. 13B, when the firstsubstrate S1 is passing through the first zone 302, the first plasmatreatment using plasma may be performed on the first substrate S1 in thefirst zone 302. That is, pre-treatment may be performed by using plasmain the first zone 302. Accordingly, in the fifth embodiment, internalimpurities of a source gas adsorbed onto a substrate may be removed byusing plasma in the first zone 302, thereby enhancing the quality of athin film deposited on the substrate. While plasma is being generated inthe first zone 302, plasma may not be generated in the second region 20.Also, after the first substrate S1 passes through the first zone 302,plasma may not be generated in the first zone 302. The fifth embodimentmay be implemented so that plasma is generated in the second zone 304while the substrate supporting unit 600 is rotating in order for thefirst substrate S1 to pass through the first zone 302. After the firstsubstrate S1 passes through the first zone 302, plasma may not begenerated in the second zone 304.

Subsequently, as illustrated in FIG. 12, when the first substrate S1 islocated in the second region 20, a deposition process using an activatedreactant gas may be performed on the first substrate S1 in the secondregion 20. While the adsorption process is being performed, thesubstrate supporting unit 600 may maintain a stop state. As describedabove, the fifth embodiment may be implemented so that a substrate,which a source gas is adsorbed onto and pre-treatment is performed on inthe first region 10 and the first zone 302, is exposed to plasma in thesecond region 20 again, thereby decreasing a deposition thickness of anupper surface to enhance a gap-fill effect. Also, while the depositionprocess is being performed, plasma may not be generated in the firstzone 302 and the second zone 304.

Subsequently, when the deposition process ends, as the substratesupporting unit 600 rotates, the first substrate S1 may pass through thesecond zone 304 and may move from the second region 20 to the firstregion 10. In this case, as illustrated in FIG. 13C, when the firstsubstrate S1 is passing through the second zone 304, the second plasmatreatment using plasma may be performed on the first substrate S1 in thesecond zone 304. That is, post-treatment may be performed by usingplasma in the second zone 304. Therefore, in the fifth embodiment,densification of a thin film deposited on the substrate may increase byremoving internal impurities of the thin film deposited on the substratein second zone 304, thereby more enhancing the quality of the thin filmdeposited on the substrate. As described above, the fifth embodiment maybe implemented so that generating of a deposition film is reduced bycutting a ligand of a source gas on the substrate with the source gasadsorbed thereonto through the pre-treatment and a thin film depositedthrough an ALD process is more densified through the post-treatment.

While plasma is being generated in the second zone 304, plasma may notbe generated in the second region 20. Also, as the first substrate S1passes through the second zone 304, plasma may not be generated in thesecond zone 304. Also, the fifth embodiment may be implemented so thatplasma is generated in the first zone 302 while the substrate supportingunit 600 is rotating in order for the first substrate S1 to pass throughthe second zone 304. After the first substrate S1 passes through thesecond zone 304, plasma may not be generated in the first zone 302. Asdescribed above, the fifth embodiment may be implemented so that plasmais generated in the first zone 302 and the second zone 304 only when thesubstrate supporting unit 600 is rotating, and plasma is not generatedin the first zone 302 and the second zone 304 when the substratesupporting unit 600 stops. Also, the fifth embodiment may be implementedso that plasma is generated in the second region 20 only when thesubstrate supporting unit 600 stops, and plasma is not generated in thesecond region 20 when the substrate supporting unit 600 is rotating. Thefifth embodiment may be implemented so that a purge gas is continuouslydistributed to the third region 30 when the substrate supporting unit600 is rotating and when the substrate supporting unit 600 stops.

Sixth Embodiment

As illustrated in FIGS. 12, 13A, 14A, and 14B, in the sixth embodiment,a processing process may be performed on a substrate by using plasma ineach of the second region 20 and the second zone 304 without usingplasma in the first region 10 and the first zone 302. An operation ofthe sixth embodiment will be described below with respect to a firstsubstrate S1.

First, as illustrated in FIG. 13A, in a state where the first substrateS1 is located in the first region 10, an adsorption process using asource gas may be performed on the first substrate S1 in the firstregion 10. While the adsorption process is being performed, thesubstrate supporting unit 600 may maintain a stop state. While theadsorption process is being performed, plasma may be generated in thesecond region 20. Also, while the adsorption process is being performed,plasma may not be generated in the second zone 304.

Subsequently, when the adsorption process ends, as the substratesupporting unit 600 rotates, the first substrate S1 may pass through thefirst zone 302 and may move from the first region 10 to the secondregion 20. In this case, as illustrated in FIG. 14A, when the firstsubstrate S1 is passing through the first zone 302, plasma may not begenerated in the first zone 302. The sixth embodiment may be implementedso that plasma is generated in the second zone 304 and is not generatedin the second region 20 while the substrate supporting unit 600 isrotating in order for the first substrate S1 to pass through the firstzone 302. After the first substrate S1 passes through the first zone302, plasma may not be generated in the second zone 304.

Subsequently, as illustrated in FIG. 12, when the first substrate S1 islocated in the second region 20, a deposition process using an activatedreactant gas may be performed on the first substrate S1 in the secondregion 20. While the deposition process is being performed, thesubstrate supporting unit 600 may maintain a stop state. Also, while thedeposition process is being performed, plasma may not be generated inthe second zone 304.

Subsequently, when the deposition process ends, as the substratesupporting unit 600 rotates, the first substrate S1 may pass through thesecond zone 304 and may move from the second region 20 to the firstregion 10. In this case, as illustrated in FIG. 14B, when the firstsubstrate S1 is passing through the second zone 304, the second plasmatreatment using plasma may be performed on the first substrate S1 in thesecond zone 304. That is, post-treatment may be performed by usingplasma in the second zone 304. Therefore, in the sixth embodiment,densification of a thin film deposited on the substrate may increase byremoving internal impurities of the thin film deposited on the substratein second zone 304, thereby more enhancing the quality of the thin filmdeposited on the substrate. Also, the sixth embodiment may beimplemented so that the thin film is deposited on the substrate by usinga reactant gas activated by plasma in the second region 20, and then,post-treatment using plasma is performed while rotating the substrate onthe basis of a rotation of the substrate supporting unit 600.Accordingly, in the sixth embodiment, a process time may be shortened,thereby more enhancing the quality of the thin film.

While plasma is being generated in the second zone 304, plasma may notbe generated in the second region 20. Also, after the first substrate S1passes through the second zone 304, plasma may not be generated in thesecond zone 304. As described above, the sixth embodiment may beimplemented so that plasma is generated in the second zone 304 only whenthe substrate supporting unit 600 is rotating, and plasma is notgenerated in the second zone 304 when the substrate supporting unit 600stops. Also, the sixth embodiment may be implemented so that plasma isgenerated in the second region 20 only when the substrate supportingunit 600 stops, and plasma is not generated in the second region 20 whenthe substrate supporting unit 600 is rotating. The sixth embodiment maybe implemented so that a purge gas is continuously distributed to thethird region 30 when the substrate supporting unit 600 is rotating andwhen the substrate supporting unit 600 stops.

Seventh Embodiment

As illustrated in FIGS. 8, 9, 11B, 14A, and 14B, in the seventhembodiment, a processing process may be performed on a substrate byusing plasma in only the second zone 304 without using plasma in thefirst region 10, the first zone 302, and the second region 20. Anoperation of the seventh embodiment will be described below with respectto a first substrate S1.

First, as illustrated in FIG. 9, in a state where the first substrate S1is located in the first region 10, an adsorption process using a sourcegas may be performed on the first substrate S1 in the first region 10.While the adsorption process is being performed, the substratesupporting unit 600 may maintain a stop state. Also, while theadsorption process is being performed, plasma may not be generated inthe second zone 304.

Subsequently, when the adsorption process ends, as the substratesupporting unit 600 rotates, the first substrate S1 may pass through thefirst zone 302 and may move from the first region 10 to the secondregion 20. In this case, as illustrated in FIG. 14A, when the firstsubstrate S1 is passing through the first zone 302, plasma is notgenerated in the first zone 302. The seventh embodiment may beimplemented so that plasma is not generated in the second zone 304 whilethe substrate supporting unit 600 is rotating in order for the firstsubstrate S1 to pass through the first zone 302. After the firstsubstrate S1 passes through the first zone 302, plasma may not begenerated in the second zone 304.

Subsequently, as illustrated in FIG. 11B, when the first substrate S1 islocated in the second region 20, a deposition process using a reactantgas may be performed on the first substrate S1 in the second region 20.While the deposition process is being performed, the substratesupporting unit 600 may maintain a stop state. Also, while thedeposition process is being performed, plasma may not be generated inthe second zone 304.

Subsequently, when the deposition process ends, as the substratesupporting unit 600 rotates, the first substrate S1 may pass through thesecond zone 304 and may move from the second region 20 to the firstregion 10. In this case, as illustrated in FIG. 14B, when the firstsubstrate S1 is passing through the second zone 304, the second plasmatreatment using plasma may be performed on the first substrate S1 in thesecond zone 304. That is, post-treatment may be performed by usingplasma in the second zone 304. Therefore, in the seventh embodiment,densification of a thin film deposited on the substrate may increase byremoving internal impurities of the thin film deposited on the substratein second zone 304, thereby more enhancing the quality of the thin filmdeposited on the substrate. After the first substrate S1 passes throughthe second zone 304, plasma may not be generated in the second zone 304.As described above, the seventh embodiment may be implemented so thatplasma is generated in the second zone 304 only when the substratesupporting unit 600 is rotating, and plasma is not generated in thesecond zone 304 when the substrate supporting unit 600 stops. Theseventh embodiment may be implemented so that a purge gas iscontinuously distributed to the third region 30 when the substratesupporting unit 600 is rotating and when the substrate supporting unit600 stops.

Eighth Embodiment

As illustrated in FIGS. 8, 9, 11B, 13B, and 13C, in the eighthembodiment, a processing process may be performed on a substrate byusing plasma in each of the first zone 302 and the second zone 304without using plasma in the first region 10 and the second region 20. Anoperation of the eighth embodiment will be described below with respectto a first substrate S1.

First, as illustrated in FIG. 9, in a state where the first substrate S1is located in the first region 10, an adsorption process using a sourcegas may be performed on the first substrate S1 in the first region 10.While the adsorption process is being performed, the substratesupporting unit 600 may maintain a stop state. Also, while theadsorption process is being performed, plasma may not be generated inthe first zone 302 and the second zone 304.

Subsequently, when the adsorption process ends, as the substratesupporting unit 600 rotates, the first substrate S1 may pass through thefirst zone 302 and may move from the first region 10 to the secondregion 20. In this case, as illustrated in FIG. 13B, when the firstsubstrate S1 is passing through the first zone 302, the first plasmatreatment using plasma may be performed on the first substrate S1 in thefirst zone 302. That is, pre-treatment may be performed by using plasmain the first zone 302. Accordingly, in the eighth embodiment, internalimpurities of a source gas adsorbed onto a substrate may be removed byusing plasma in the first zone 302, thereby enhancing the quality of athin film deposited on the substrate. After the first substrate S1passes through the first zone 302, plasma may not be generated in thefirst zone 302. The eighth embodiment may be implemented so that plasmais generated in the second zone 304 while the substrate supporting unit600 is rotating in order for the first substrate S1 to pass through thefirst zone 302. After the first substrate S1 passes through the firstzone 302, plasma may not be generated in the second zone 304.

Subsequently, as illustrated in FIG. 11B, when the first substrate S1 islocated in the second region 20, a deposition process using a reactantgas may be performed on the first substrate S1 in the second region 20.While the deposition process is being performed, the substratesupporting unit 600 may maintain a stop state. Also, while thedeposition process is being performed, plasma may not be generated inthe first zone 302 and the second zone 304.

Subsequently, when the deposition process ends, as the substratesupporting unit 600 rotates, the first substrate S1 may pass through thesecond zone 304 and may move from the second region 20 to the firstregion 10. In this case, as illustrated in FIG. 13C, when the firstsubstrate S1 is passing through the second zone 304, the second plasmatreatment using plasma may be performed on the first substrate S1 in thesecond zone 304. That is, post-treatment may be performed by usingplasma in the second zone 304. Therefore, in the eighth embodiment,densification of a thin film deposited on the substrate may increase byremoving internal impurities of the thin film deposited on the substratein second zone 304, thereby more enhancing the quality of the thin filmdeposited on the substrate. As described above, the eighth embodimentmay be implemented so that generating of a deposition film is reduced bycutting a ligand of a source gas on the substrate with the source gasadsorbed thereonto through the pre-treatment and a thin film depositedthrough an ALD process is more densified through the post-treatment.

After the first substrate S1 passes through the second zone 304, plasmamay not be generated in the second zone 304. Also, the eighth embodimentmay be implemented so that plasma is generated in the first zone 302while the substrate supporting unit 600 is rotating in order for thefirst substrate S1 to pass through the second zone 304. After the firstsubstrate S1 passes through the second zone 304, plasma may not begenerated in the first zone 302. As described above, the eighthembodiment may be implemented so that plasma is generated in the firstzone 302 and the second zone 304 only when the substrate supporting unit600 is rotating, and plasma is not generated in the first zone 302 andthe second zone 304 when the substrate supporting unit 600 stops. Also,the eighth embodiment may be implemented so that a purge gas iscontinuously distributed to the third region 30 when the substratesupporting unit 600 is rotating and when the substrate supporting unit600 stops.

As described above, embodiments of the substrate processing apparatusaccording to the present disclosure may be implemented so that, in acase where a processing process using plasma is performed in at leastone of the first zone 302 and the second zone 304, plasma is generatedin at least one of the first zone 302 and the second zone 304 only whenthe substrate supporting unit 600 is rotating, and moreover, plasma isnot generated in all of the first zone 302 and the second zone 304 whenthe substrate supporting unit 600 stops. Accordingly, the substrateprocessing apparatus according to the present disclosure is implementedso that plasma generated in at least one of the first zone 302 and thesecond zone 304 is prevented from affecting an adsorption process and adeposition process, and thus, the quality of a substrate undergoing theadsorption process and the deposition process is more enhanced.

Hereinafter, an embodiment of a substrate processing method according tothe present disclosure will be described in detail with reference to theaccompanying drawings.

Referring to FIGS. 1 to 15, the substrate processing method according tothe present disclosure may be performed by the substrate processingapparatus according to the present disclosure described above. Thesubstrate processing method according to the present disclosure mayinclude the following steps.

First, an adsorption process may be performed by distributing a sourcegas to the first region 10 in step S11. When the first substrate S1 isdisposed in the first region 10, step S11 may be performed by the firstgas distribution unit 100 distributing the source gas to the firstregion 10. Therefore, the adsorption process may be performed on thefirst substrate S1 disposed in the first region 10. While the adsorptionprocess is being performed, the substrate supporting unit 600 may bemaintained in a stop state.

Subsequently, when the adsorption process ends, the substrate supportingunit 600 may rotate so that the first substrate S1 is disposed in thesecond region 20 in step S12. Such step S12 may be performed by movingthe first substrate S1 from the first region 10 to the second region 20on the basis of a rotation of the substrate supporting unit 600. In thiscase, the first substrate S1 may pass through the first zone 302 of thethird region 30 and may move from the first region 10 to the secondregion 20, in order to be disposed in the second region 20.

Subsequently, when the first substrate S1 is disposed in the secondregion 20, a deposition process may be performed by distributing areactant gas to the second region 20 in step S13. Such step S13 may beperformed by the second gas distribution unit 200 distributing thereactant gas to the second region 20. Therefore, the deposition processmay be performed on the first substrate S1 disposed in the second region20. While the deposition process is being performed, the substratesupporting unit 600 may be maintained in a stop state.

Subsequently, when the deposition process ends, the substrate supportingunit 600 rotates so that the first substrate S1 is disposed in the firstregion 10 in step S14. Such step S14 may be performed by moving thefirst substrate S1 from the second region 20 to the first region 10 onthe basis of a rotation of the substrate supporting unit 600. In thiscase, the first substrate S1 may pass through the second zone 304 of thethird region 30 and may move from the second region 20 to the firstregion 10, in order to be disposed in the first region 10.

By repeatedly performing the above-described steps, the substrateprocessing method according to the present disclosure may deposit a thinfilm on the first substrate S1 by using an ALD process. While theabove-described steps are being performed, the substrate processingmethod according to the present disclosure may include a step ofcontinuously distributing a purge gas to the third region 30. Also, thesubstrate processing method according to the present disclosure may beimplemented so that, in a case where a thin film is deposited on thefirst substrate S1, a thin film is also deposited on the secondsubstrate S2 disposed at a position symmetrical with respect to therotation axis of the substrate supporting unit 600. That is, thesubstrate processing method according to the present disclosure mayperform the above-described steps on the first substrate S1 and thesecond substrate S2. In this case, a plurality of first substrates S1and a plurality of second substrates S2 are disposed in each of thefirst region 10 and the second region 20.

Here, in step S13 of performing the deposition process, the depositionprocess may be performed by distributing a reactant gas, activated byusing plasma, to the second region 20. Therefore, the substrateprocessing method according to the present disclosure may be implementedto be suitable for a low temperature process. For example, the substrateprocessing method according to the present disclosure may be implementedto be suitable for a semiconductor low temperature nitride process.Plasma corresponding to the second region 20 may be generated only whenthe substrate supporting unit 600 stops. Plasma may not be generated inthe second region 20 when the substrate supporting unit 600 is rotating.

Here, step S12 of rotating the substrate supporting unit in order forthe first substrate to be disposed in the second region may be performedby generating plasma in the first zone 302 while the first substrate S1is passing through the first zone 302 of the third region 30, inrotating the substrate supporting unit 600 in order for the firstsubstrate S1 to pass through the first zone 302. Therefore, thesubstrate processing method according to the present disclosure may beimplemented so that the first plasma treatment using plasma is performedon the first substrate S1 in the first zone 302. That is, pre-treatmentmay be performed by using plasma in the first zone 302. Accordingly, inthe substrate processing method according to the present disclosure,internal impurities of a source gas adsorbed onto a substrate may beremoved by using plasma in the first zone 302, thereby enhancing thequality of a thin film deposited on the substrate. Generating of plasmain the first zone 302 may be performed by the first plasma distributionunit 302 a distributing a plasma gas to the first zone 302. Plasma maybe generated in the first zone 302 only when the substrate supportingunit 600 is rotating. Plasma may not be generated in the first zone 302when the substrate supporting unit 600 stops.

Here, step S14 of rotating the substrate supporting unit in order forthe first substrate to be disposed in the first region may be performedby generating plasma in the second zone 304 while the first substrate S1is passing through the second zone 304 of the third region 30, inrotating the substrate supporting unit 600 in order for the firstsubstrate S1 to pass through the second zone 304. Therefore, thesubstrate processing method according to the present disclosure may beimplemented so that the second plasma treatment using plasma isperformed on the first substrate S1 in the second zone 304. That is,pre-treatment may be performed by using plasma in the second zone 304.Accordingly, in the substrate processing method according to the presentdisclosure, densification of a thin film deposited on the substrate mayincrease by removing internal impurities of the thin film deposited onthe substrate in second zone 304, thereby more enhancing the quality ofthe thin film deposited on the substrate. Generating of plasma in thesecond zone 304 may be performed by the second plasma distribution unit304 b distributing a plasma gas to the second zone 304. Plasma may begenerated in the second zone 304 only when the substrate supporting unit600 is rotating. Plasma may not be generated in the second zone 304 whenthe substrate supporting unit 600 stops.

Here, step S13 of rotating the substrate supporting unit in order forthe first substrate to be disposed in the second region and step S14 ofrotating the substrate supporting unit in order for the first substrateto be disposed in the first region may be performed by generating plasmain the first zone 302 and the second zone 304 of the third region 30.Therefore, the substrate processing method according to the presentdisclosure may be implemented so that pre-treatment is performed byusing plasma in the first zone 302 and post-treatment is performed byusing plasma in the second zone 304. Therefore, the substrate processingmethod according to the present disclosure may be implemented so thatgenerating of a deposition film is reduced by cutting a ligand of asource gas on the substrate with the source gas adsorbed thereontothrough the pre-treatment and a thin film deposited through an ALDprocess is more densified through the post-treatment. In this case,plasma corresponding to the first zone 302 and plasma corresponding tothe second zone 304 may be generated only when the substrate supportingunit 600 is rotating. Plasma is not generated in all of the first zone302 and the second zone 304 when the substrate supporting unit 600stops.

As described above, the substrate processing method according to thepresent disclosure may be implemented so that, in a case where aprocessing process using plasma is performed in at least one of thefirst zone 302 and the second zone 304, plasma is generated in at leastone of the first zone 302 and the second zone 304 only when thesubstrate supporting unit 600 is rotating, and plasma is not generatedin all of the first zone 302 and the second zone 304 when the substratesupporting unit 600 stops. Accordingly, the substrate processing methodaccording to the present disclosure is implemented so that plasmagenerated in at least one of the first zone 302 and the second zone 304is prevented from affecting an adsorption process and a depositionprocess, and thus, the quality of a substrate undergoing the adsorptionprocess and the deposition process is more enhanced. Also, the substrateprocessing method according to the present disclosure may perform aprocessing process on a substrate by using steps described above in eachof the first to eighth embodiments of the substrate processing apparatusaccording to the present disclosure.

Those skilled in the art can understand that the present disclosure canbe embodied in another detailed form without changing the technicalspirit or the essential features. Therefore, it should be understoodthat the embodiments described above are exemplary from every aspect andare not restrictive. It should be construed that the scope of thepresent disclosure is defined by the below-described claims instead ofthe detailed description, and the meanings and scope of the claims andall variations or modified forms inferred from their equivalent conceptsare included in the scope of the present disclosure.

1. An apparatus for processing a substrate, the apparatus comprising: achamber; a substrate supporting unit rotatably installed in a processspace of the chamber to support one or more substrates; a first gasdistribution unit for distributing a source gas to a first region of theprocess space; a second gas distribution unit for distributing areactant gas, reacting with the source gas, to a second region of theprocess space; and a third gas distribution unit for distributing apurge gas, dividing the first region and the second region, to a thirdregion.
 2. The apparatus of claim 1, wherein a plasma gas is distributedto the second region through the second gas distribution unit.
 3. Theapparatus of claim 1, wherein the third region is divided into a firstzone, a second zone, and a third zone.
 4. The apparatus of claim 3,wherein a first plasma distribution unit is disposed in the first zoneof the third region, and the first plasma distribution unit distributesa plasma gas to the first zone.
 5. The apparatus of claim 4, whereinplasma is generated in the first zone only when the substrate supportingunit is rotating.
 6. The apparatus of claim 3, wherein a second plasmadistribution unit is disposed in the second zone of the third region,and the second plasma distribution unit distributes a plasma gas to thesecond zone.
 7. The apparatus of claim 6, wherein plasma is generated inthe second zone only when the substrate supporting unit is rotating. 8.The apparatus of claim 2, wherein the plasma gas is distributed throughthe third gas distribution unit to all of the first zone and the secondzone of the third region.
 9. The apparatus of claim 8, wherein plasma isgenerated in each of the first zone and the second zone only when thesubstrate supporting unit is rotating.
 10. The apparatus of claim 8,wherein the third gas distribution unit comprises a first plasmadistribution unit disposed in the first zone and a second plasmadistribution unit disposed in the second zone, and each of the firstplasma distribution unit and the second plasma distribution unit isconfigured with a first electrode and a second electrode having anelectric potential difference therebetween to generate plasma.
 11. Theapparatus of claim 1, wherein a temperature detector measuring atemperature of a substrate in the third region is installed in the thirdgas distribution unit.
 12. The apparatus of claim 3, wherein a firstplasma distribution unit is disposed in the first zone of the thirdregion, a second plasma distribution unit is disposed in the second zoneof the third region, and the first plasma distribution unit or thesecond plasma distribution unit is configured with a first electrode anda second electrode having an electric potential difference therebetweento generate plasma.
 13. The apparatus of claim 3, wherein a first plasmadistribution unit is disposed in the first zone of the third region, asecond plasma distribution unit is disposed in the second zone of thethird region, and the first plasma distribution unit or the secondplasma distribution unit is connected to a remote plasma device todistribute an ionized gas or a radical.
 14. The apparatus of claim 2,wherein the third gas distribution unit comprises a center purgedistribution unit distributing the purge gas to a center region of thesubstrate supporting unit in the third zone.
 15. The apparatus of claim1, wherein the third gas distribution unit comprises a first purge gasdistribution unit distributing the purge gas to a first zone of thethird region and a first plasma distribution unit distributing a plasmagas to the first zone, and the substrate supporting unit rotates so thata substrate passes through the first zone and moves from the firstregion to the second region.
 16. The apparatus of claim 1, wherein thethird gas distribution unit distributes a plasma gas to a first zone ofthe third region to perform purging on the first zone, and the substratesupporting unit rotates so that a substrate passes through the firstzone and moves from the first region to the second region.
 17. Theapparatus of claim 1, wherein the third gas distribution unitdistributes a plasma gas to a second zone of the third region to performpurging on the second zone, and the substrate supporting unit rotates sothat a substrate passes through the second zone and moves from thesecond region to the first region.
 18. A method of processing asubstrate, the method comprising: a step of, when a first substrate isdisposed in a first region of a process space of a chamber, distributinga source gas to the first region to perform an adsorption process; astep of, when the adsorption process ends, rotating a substratesupporting unit supporting the first substrate in order for the firstsubstrate to be disposed in a second region of the process space of thechamber; a step of, when the first substrate is disposed in the secondregion, distributing a reactant gas to the second region to perform adeposition process; and a step of, when the deposition process ends,rotating the substrate supporting unit in order for the first substrateto be disposed in the first region, wherein the step of performing thedeposition process distributes a reactant gas, activated by usingplasma, to the second region to perform the deposition process.
 19. Themethod of claim 18, wherein the step of rotating the substratesupporting unit in order for the first substrate to be disposed in thesecond region rotates the substrate supporting unit in order for thefirst substrate to pass through a first zone of the third regiondisposed between the first region and the second region and generatesplasma in the first zone while the first substrate is passing throughthe first zone.
 20. The method of claim 18, wherein the step of rotatingthe substrate supporting unit in order for the first substrate to bedisposed in the first region rotates the substrate supporting unit inorder for the first substrate to pass through a second zone of the thirdregion disposed between the second region and the first region andgenerates plasma in the second zone while the first substrate is passingthrough the second zone.
 21. The method of claim 18, wherein each of thestep of rotating the substrate supporting unit in order for the firstsubstrate to be disposed in the second region and the step of rotatingthe substrate supporting unit in order for the first substrate to bedisposed in the first region generates plasma in a first zone and asecond zone of the third region disposed between the first region andthe second region.